Could the chip failures to which he was referring be those caused by random doping fluctuations (RDFs)? I don't have the expertise to interpret this paper, but it seems to be saying that increasing the voltage reduces the extent to which RDF's cause failures.
"Classically, failures in embedded memory cells are categorized as either of a transient nature, dependent on operating conditions, or of a fixed nature due to manufacturing errors. Symptoms of these failures are expressed as either: (1) an increase in cell access time, or (2) unstable read/write operations.
In process technologies greater than 100nm, fixed errors are predominant, with a minority of the errors introduced due to transient effects. This model cannot be sustained as scaling progresses due to the random nature of the fluctuation of dopant atom distributions and variation in gate length. In fact, in sub 100nm design, Random Dopant Fluctuation (RDF) has a dominant impact on the transistors’ strength mismatch and is the most noticeable type of intra-die variation that can lead to cell instability and failure in embedded memories."
So while these RDFs may have nothing to do with the manufacturing errors TSMC is encountering because of N3B's complexity, could increasing the voltage still reduce the
net failure rate (which would be partly a product of rate of mfr. errors x fault rate due to RDF's)? I.e., is he saying TSMC (or Apple) is upping the voltage to reduce a defect rate it can reduce to compensate for a defect rate it can't reduce?