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At the other place I saw a discussion about forming max, ultra, etc. chips by copying a base die, and there was some discussion of rotating vs. mirroring the design.
The answer is, you want to either rotate by 180 degrees or you want to mirror (either horizontally or vertically or both), but you don’t want to rotate by 90 or 270 degrees.
Many semiconductor substrate materials are anisotropic, because the substrate is always a crystal structure and depending on direction the atoms and their bonds are different. This causes carrier mobility to be different in different directions, so if you rotate a transistor by 90 degrees it will probably still work, but its performance may differ by quite a lot.
This was always an issue for compound semiconductors (like GaAs, InP, etc.) that have hexagonal crystal structures with different atoms on different faces. But it’s become an issue for silicon, as well, because modern silicon substrates look a lot more like SiGe due to germanium doping used to introduce a kink in the energy bands so that electron mobility is increased.
So it would be fine for Apple to mirror a base die, and it’s very easy to do from a design perspective (it requires no design effort at all). Whether they choose to mirror vs. rotate 180 degrees would depend on things like external connections (e.g. to the crossbars), thermal considerations (how close does each choice put hot regions to each other), etc.
The answer is, you want to either rotate by 180 degrees or you want to mirror (either horizontally or vertically or both), but you don’t want to rotate by 90 or 270 degrees.
Many semiconductor substrate materials are anisotropic, because the substrate is always a crystal structure and depending on direction the atoms and their bonds are different. This causes carrier mobility to be different in different directions, so if you rotate a transistor by 90 degrees it will probably still work, but its performance may differ by quite a lot.
This was always an issue for compound semiconductors (like GaAs, InP, etc.) that have hexagonal crystal structures with different atoms on different faces. But it’s become an issue for silicon, as well, because modern silicon substrates look a lot more like SiGe due to germanium doping used to introduce a kink in the energy bands so that electron mobility is increased.
So it would be fine for Apple to mirror a base die, and it’s very easy to do from a design perspective (it requires no design effort at all). Whether they choose to mirror vs. rotate 180 degrees would depend on things like external connections (e.g. to the crossbars), thermal considerations (how close does each choice put hot regions to each other), etc.