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I was thinking of tables showing the smaller process is expected to give reduced power consumption for the same performance, everything else being equal. I thought this meant that, if you took the A16 architecture, and were able to do an exact port from N4 to N3, it should show lower power consumption at the same frequency. That would be akin to what Intel did with a "Tick": Same architecture, newer process.
In this case, though, you have the confounding factor that the architecture isn't the same. So it seems the only way you'd get the same (rather than lower) power consumption at the same frequency on a smaller process would be if, for the same frequency, the new architecture itself caused an increase in power consumption.
And if so, is it typical that newer (i.e., more advanced) architectures draw more power for the same frequency? [For instance, when Intel did a "tock" (putting a newer architecture onto the existing process).]
Well it all gets pretty complicated. If you just scale an existing design (which is impossible nowadays), yeah, you would likely see reduced power consumption (but…)
The reason it’s impossible nowadays is because all dimensions don’t scale the same from node to node. Spacing may scale a different amount than minimum width, and metal may scale differently than transistors. And the wire heights seldom scale anywhere close to their widths. And voltage seldom is scaled down anymore. I’ve said it before and I’ll say it again - anytime TSMC or anyone says “this process is x % faster at the same power” (or vice versa), I respond with “thanks for your unhelpful information. Now give me the design rules and the layer stack and I will figure out what effect that has on my design.”
If your transistors get 33% smaller but your wires get 20% less capacitive, then your transistors are effectively weaker, and you need to size them up to drive the load, or you need to spread the wires to reduce capacitance, but that increases some wire lengths which increases capacitance. And if you make your wires shorter and thinner to reduce capacitance, you increase their resistance. But if they get shorter, than resistance doesn’t need to increase. And you can make them shorter if the transistors are smaller and don’t need to be so far apart. But if spacing scales differently than widths, or if metal scales differently than transistors, than the whole virtuous cycle doesn’t work right.
The “but…” is that the equation and analysis I referred to is for dynamic power. Static power increases as you scale down, because you can’t generate enough electric field across the channel region to completely shut off the transistors. That is attacked by new transistor architectures (MOSFET->FINFET->GAAFET, etc.). N2 is where you’ll see that huge improvement for TSMC, I believe.
The real advantage to smaller transistors is you can fit a lot more of them in the same space.